| PART |
Description |
Maker |
| SA90CA SA50 SA8.0CA SA8.0A SA7.0A SA6.0A SA5.0A SA |
DEVICES FOR BIPOLAR APPLICATIONS
500 Watt Transient Voltage Suppressors(500瓦瞬变电压抑制器) 500瓦瞬态电压抑制器00瓦瞬变电压抑制器
500 Watt Transient Voltage Suppressors(500瓦瞬变电压抑制器) 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
500 Watt Transient Voltage Suppressors(500瓦瞬变电压抑制器) 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
RES 511 OHM 1/10W .1% 0805 SMD 双极器件中的应用
DEVICES FOR BIPOLAR APPLICATIONS 双极器件中的应用
4AV Series Hall-Effect Vane with 24 AWG irradiated polyethelene 558,8 mm [22 in] lead wires
CONNECTOR ACCESSORY
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| CMR05C2R5DODP CMR04C2R5DODP CMR04F271GPCR CMR05C12 |
CAPACITOR, MICA, 500 V, 0.0000025 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 300 V, 0.00027 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.000012 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00022 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00016 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00015 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00013 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00012 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.0002 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00018 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.000024 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00024 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.000062 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.012 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.0012 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.024 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.027 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.002 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, MICA, 500 V, 0.00039 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAP,Mica,6pF,500VDC,.5-pF Tol,.5 Tol,-200,200ppm-TC CAPACITOR, MICA, 500 V, 0.000006 uF, THROUGH HOLE MOUNT
|
Cornell Dubilier Electronics, Inc.
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
| TS250-130F-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| MICROSMD010F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| EPC1064 EPC1 EPC1213 EPC1441 EPC1441XXX EPC1064PC8 |
Configuration devices for SRAM-based LUT devices, 440,800 1-bit device with 5.0-V or 3.3-V operation
Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 3.3-V operation
Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 5.0-V operation
Configuration devices for SRAM-based LUT devices, 212,942 1-bit device with 5.0-V operation
|
Altera Corporation
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
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